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Capacitor-couple ESD protection circuit for deep-submicron low-voltage

内容提示: IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 4, NO. 3, SEPTEMBER 1996 307 Capacitor-Couple ESD Protection Circuit for Deep-Submicron Low-Voltage CMOS ASIC Ming-Dou Ker, Member, IEEE, Chung-Yu Wu, Member, IEEE, Tao Cheng, and Hun-Hsien Chang, Student Member, IEEE Abstract

Low-Voltage Switched-Capacitor Circuits

(3.1) The low-voltage integrator circuit shown in Figure 2.8 can be readily modified and combined to obtain a switched-capacitor filter having the same low-frequency behavior.

A Low-Energy and Area-Efficient Vaq-Based Switching Scheme

ent from most published tri-level switching schemes, a new third reference voltage V aq which equals to 1/4 V ref is applied to the proposed scheme. And beneting from V aq, the proposed scheme achieves 87.5% capacitor area reduction over the conven-tional scheme. Due to the capacitor-splitting structure and top-plate sampling, the

Novel structure of deep trench capacitor with higher

This paper discusses a novel structure of deep trench capacitor with breakdown voltage of 10V and capacitance density of 527nF/mm2, serving for Low Dropout Voltage regulator in IC power management.

LOW-VOLTAGE SWITCHED-CAPACITOR RESONATORS

This current structure is adapted for UGR low-voltage structure. It is mismatch sensitive similarly to the im- proved charge-mode PNP architecture shown in [13]. Figure 8: Simulation results of VPNP type resonator from SWIT- CAP2 with fclock=40 MHz (a) for different opamp DC gains: Adc=120 dB (solid), 50 dB (dots); (b) for different opamp band-

High-Density Low-Profile Capacitors towards 3D Heterogeneous

Deep trench capacitor structure •Up to 1300 nF/mm2density •Superior VCC and TCC •Comparable ESR to MLCCs •Thickness as low as 70-100 µm •Scalability to high voltage with high stability (>100 V). •Low self-inductance (<10 pH). •Compliant with the automotive quality standard (AECQ100).

Memo

This document provides standard requirements and general guidelines for the design, performance, testing and application of low-voltage dry-type alternating current (AC) power

Low-Power Low-Voltage ∆Σ Modulator Using Switched-Capacitor

Capacitor Passive Filters. 21th IFIP/IEEE International Conference on Very Large Scale Integration - A low-voltage low-power fourth-order active-passive ΔΣ modulator amplifier design requirements in the full input-feedforward modulator structure [8, 9]; (v) an accurate and low attenuation passive adder for summation of the input and

A modular switched-capacitor multilevel inverter featuring voltage

The working principle of the inverter is analyzed as shown follows: (1) V out = 3V dc: When the switches S 13 and S 23 are turned ON, capacitors C 1 and C 2 can be charged to V dc, as shown in Fig. 3b. Then output voltage 3V dc is synthesized by turning ON the switches S 1 and S 4. (2) V out = 2V dc: When the switches S 11, S 12 and S 23 are turned ON,

Anomalous Currents in Low Voltage Polymer Tantalum Capacitors

In comparison to high voltage Ta capacitors, low voltage Ta capacitors with thinner dielectrics are typically manufactured with finer Ta powder to increase the surface area of the anode and thereby the specific charge of the capacitor, CV/cm 3. The high specific surface area and relatively small pore structure make it very difficult to impregnate these anodes with

Distribution and influence factors of electric field in high‐voltage

to the inner structure of power capacitor component, the numerical simulation of inner electric field is carried on, and end plates are low-voltage electrodes with the voltage of 0 V, and the middle plate is high-voltage electrode with the voltage of 2116.95 V.

Capacitor

Because at this point, the energy of source voltage and the capacitor voltage are equal. As a result, the electrons or electric field on the right side plate repels the electrons coming from the voltage source. On the other hand, if low voltage is applied to the capacitor, only a small amount of charge is transferred to the capacitor plates

Low-Voltage Capacitor Electrical

In this work, a capacitor charged at low voltage has been used instead. The effect of the initial porosity of the Fe powder mass, i.e., of the precompaction pressure, and the

Low Voltage Operating 2D MoS2 Ferroelectric Memory

Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low

Low-Power Low-Voltage ΔΣ Modulator

A low-voltage low-power fourth-order active-passive ΔΣ modulator with one active stage is presented. the attenuation due to the passive summation is dealt with a low

High-voltage MIM-type aluminum electrolytic capacitors

Aluminium electrolytic capacitors (AECs) are known for their high specific capacitance, wide range of operating voltages and low cost compared to other capacitors [9], and have been widely used in daily consumer electronics, while demonstrating great potential in high energy and high-power applications [10], [11], [12], [13].Based on the form of their electrolyte,

High step‐down dc–dc converter with low voltage

Switched capacitor buck converter is introduced to improve the voltage conversion ratio of the conventional buck converter . Main benefits of this converter are low volume and simplicity of the control algorithm in comparison

Novel structure of deep trench capacitor with higher breakdown

This paper discusses a novel structure of deep trench capacitor with breakdown voltage of 10V and capacitance density of 527nF/mm2, serving for Low Dropout Voltage regulator in IC power management. The structure is presented using 3D & 2D Sentaurus Synopsys simulation, with RIE etching and high quality LPCVD is deployed on the equivalent process.

Sandwich Structure Type RF-MEMS Variable Capacitor with Low Voltage

Simulation results show that the proposed sandwich structure type RF-MEMS variable capacitor can operate at a control voltage of less than 3.2V and achieves a tuning range of 4.8:1 (capacitance: 630-130fF). A sandwich structure type RF-MEMS variable capacitor is proposed, that consists of a movable middle plate, and fixed top and bottom plates having

High Voltage Generation by Fiber-Coupled Pulsed Laser for a

low-voltage side high-voltage side ac-coupling capacitor/ transformer network filter capacitor network + v dc,n + í v dc,1 Fig. 2. The structure of voltage multipliers, which transfer the energy from low- to high-voltage side via capacitive and/or inductive coupling.

Low-Voltage Fully Differential CMOS Switched-Capacitor Amplifiers

low-voltage fully differential CMOS switched-capacitor amplifier. Depending on the input-stage clock signals, the amplifier can be either noninverting and switches S5-S6 and S5''-S6'' are

Low-voltage switched-capacitor circuits

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high

Low Drop-Out Voltage Regulators: Capacitor-less Architecture

Demand for system-on-chip solutions has increased the interest in low drop-out (LDO) voltage regulators which do not require a bulky off-chip capacitor to achieve stability, also called capacitor-less LDO (CL-LDO) regulators.

LTPS Pixel Circuit Using Additional Capacitor Structure to Prevent

Chen, Yi Chien ; Chen, Bo Shu ; Chang, Jui Hung et al. / LTPS Pixel Circuit Using Additional Capacitor Structure to Prevent Leakage Current for Low-Frame-Rate Displays.Proceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials.

Table of Contents

Fig. 3 Basic structure of aluminum electrolytic capacitor 1-2 Material Composition 《Electrode foil》 For electrode foil, high purity foil (generally 99% or more) with a thickness of 20μm to 120μm. for low voltage capacitors and straight pit shape by DC etching method for high voltage capacitor is selected, respectively (Photo 1).

Metal-layer capacitors in the 65nm CMOS process and the

Fig. 5. Schematic of MOM capacitor. Fig. 6. MOM capacitor structure used in this work. Fig. 7. MOM capacitor structure layout (a) top view and (b) cross-sectional view. Table 2 Estimated layout area of capacitors with different capacitances in a 65 nm CMOS process. Type C eq (pF) M Y Area C eq per unit area (fF/lm2) MOM cap. 13 27 lm 28 lm 1.32

An energy-efficient switching scheme with low common-mode voltage

An energy-efficient switching scheme with low common-mode voltage variation and simple capacitor array for successive approximation register (SAR) analog-to-digital converters (ADCs) is presented. The proposed scheme adopts simple binary weighted capacitor array without capacitor-splitting, and consumes no switching energy in the first two comparison

The Fundamentals of LDO Design and Applications

A low dropout regulator (LDO) consists of a voltage reference, an error amplifier, a feedback voltage divider, and a series pass element, usually a bipolar or CMOS transistor (see Figure 1).

Low Voltage Capacitor Leakage Tester

The basic structure of a low voltage capacitor leakage tester consists of two probes that are connected to the capacitor. The probes measure the current that passes

Low-voltage capacitors and filters

Hitachi Energy develops and manufactures low-voltage capacitors and filters which improve the power quality of electrical networks.

Novel Structure of Deep Trench Capacitor With Higher Breakdown

reakdown voltage of 10V and capacitance density of 527nF/mm2, serving for Low Dropout Voltage regulator in IC power management. The structure is prese ted using 3D & 2D

Capacitor

Electric double-layer capacitors (now supercapacitors) were invented in 1957 when H. Becker developed a "Low voltage electrolytic capacitor with porous carbon electrodes". [17] [18]

Capacitor Basics | Electronics Basics

Capacitors can be differentiated by the following characteristics depending on the dielectric and electrode materials used. Polarity, small/large size, thin/low-profile, operating

Low-voltage switched-capacitor resonators

This paper presents the low-voltage (LV) implementations of two well-known switched-capacitor resonators, namely the "lossless- discrete integrator" and the "two-delay-loop" stages.

A Nine-Level Switched-Capacitor Step-Up Inverter with Low Voltage

The proposed inverter has a quadruple voltage gain with low voltage stress. (3) The PIV of each switch is kept within 2V dc, which can significantly reduce the TSV of inverter. (4) An extendable structure in which the PIV of all switches can be kept within 3V dc. (5) Capacitor voltage can be self-balanced without involving additional controls.

A Wide Tuning Range and Low Phase Noise VCO

A Wide Tuning Range and Low Phase Noise VCO using New Capacitor Bank Structure. December 2018; Authors: Mostafa Katebi. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc

A 13-level switched-capacitor-based multilevel inverter with

Compared to other 13-level switched-capacitor inverters, the proposed structure utilizes fewer components, capacitors with lower maximum voltage, and fewer conduction

The Uplifted-Boost Switched-Inductor/Capacitor Quasi Z-Source

In this article, a new structure of the switched-inductor/capacitor quasi Z-source inverter (SLC-qZSI) is proposed that has a high boost factor in a high modulation index to provide an improved quality output voltage. Additionally, this structure has features such as equal and low voltage stress on capacitors of SLC cells and diodes, identical current ripple for the source and all

A CMOS-Integrated Capacitor-Less N-LDO Featuring 1.2-1.8V

This paper introduces a capacitor-less n-type Low Dropout Regulator (LDO) designed to enhance transient response and expand the output voltage and current range, making it suitable for low-power biomedical System-on-Chip (SoC) applications. Utilizing a Recycling Folded Cascode (RFC) configuration to implement a common-mode feedback loop, this design improves the

Low-voltage coefficient capacitors for VLSI processes

The addition of a high-quality capacitor structure to a 1- mu m digital CMOS process is considered to allow the fabrication of mixed analog and digital VLSI circuits. Two approaches have been examined which require minimal changes in the existing process. The first involves a high-dose arsenic implant through the thin (225 A) gate oxide to produce n/sup +/ single-crystal silicon

6 FAQs about [Low voltage capacitor structure]

What is a low-voltage dry-type alternating current (AC) power capacitor?

This document provides standard requirements and general guidelines for the design, performance, testing and application of low-voltage dry-type alternating current (AC) power capacitors rated 1,000V or lower, and for connection to low-voltage distribution systems operating at a nominal frequency of 50Hz or 60Hz.

Do low drop-out voltage regulators require a bulky off-chip capacitor?

Abstract: Demand for system-on-chip solutions has increased the interest in low drop-out (LDO) voltage regulators which do not require a bulky off-chip capacitor to achieve stability, also called capacitor-less LDO (CL-LDO) regulators.

Why is capacitor characteristic important in voltage regulator design?

life, and unpredictable circuit behavior . Thus capacitor characteristic is the key factor to the voltage regulator design. For long term strategic, it is important to support LDO with over 400nF/mm2 capacitanc nsities, operation voltage of above 10 volts, 60 - 100 micron

Which capacitor has the most negligible capacitance?

Assuming the same voltage ripple percentage, C 1 has the most negligible capacitance among the three capacitors in the proposed structure. Therefore, increasing the capacitance of this capacitor, which results in a voltage ripple of less than 5%, can significantly reduce the inrush current.

Why does a capacitor have a low inrush current?

On some levels, the inrush current is suppressed due to the presence of inductors. In other levels where the inductor is not in the capacitor charging path, the ripple voltage of the capacitor is low due to the proper charging sequence, resulting in limited inrush current.

What is the difference between 13 level and 17 level capacitors?

In the 17-level structure of 9, the inrush current has been reduced using inductance in series with the source. However, this structure has 14 switches and two diodes and requires a high-voltage level capacitor. The 13-level structure of 14 utilized additional switching states, reducing voltage ripple and inrush current during capacitor charging.

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